13 February 1986 Electro-Optical Properties Of III-V Compound Semiconductors For Spatial Light Modulation Applications
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Proceedings Volume 0634, Optical and Hybrid Computing; (1986); doi: 10.1117/12.964025
Event: Optical and Hybrid Computing, 1986, Leesburg, United States
Abstract
Electroabsorption and electrorefraction properties of bulk and multiple quantum well structures made fr III-V compound semiconductor materials are discussed in this paper. The large electroabsorption that has already been observed is suitable for spatial light modulation. The potential advantages for using these structures for spatial light modulation include high speed of response and monolithic integration with detectors and electronic devices on the same chip. Variations of the electro-optical properties such as absorption wavelength birefringence. nonlinearity and speed of response as a function of structural
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William S. C. Chang, H. H. Wieder, T. E. Van Eck, A. L. Kellner, P. Chu, "Electro-Optical Properties Of III-V Compound Semiconductors For Spatial Light Modulation Applications", Proc. SPIE 0634, Optical and Hybrid Computing, (13 February 1986); doi: 10.1117/12.964025; https://doi.org/10.1117/12.964025
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