21 October 1986 Semiconductive Preionization Technique
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Proceedings Volume 0650, High Power Lasers and Their Industrial Applications; (1986) https://doi.org/10.1117/12.938080
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
The semiconductive preionization technique involves the use of a semiconductive plate to produce a row of spark discharges which illuminates the laser gas. It is shown that the transverse resistance of the preionizer determines the arc free input energy, the laser output energy and the efficiency of the system.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruno Walter, Bruno Walter, Dieter Schuocker, Dieter Schuocker, "Semiconductive Preionization Technique", Proc. SPIE 0650, High Power Lasers and Their Industrial Applications, (21 October 1986); doi: 10.1117/12.938080; https://doi.org/10.1117/12.938080

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