New IR Optical Waveguides

A. Azema; J. Botineau; Th. Brossat

doi:10.1117/12.938164

3 November 1986 New IR Optical Waveguides

A. Azema, J. Botineau, Th. Brossat

Author Affiliations +

Proceedings Volume 0651, Integrated Optical Circuit Engineering III; (1986) https://doi.org/10.1117/12.938164
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

In recent years Hg1-xCdxTe with high concentrations of mercury has commonly been used in infrared detectors. In this paper it is shown that the same type of material, but with low concentration of mercury, can be used to form low-loss waveguides at 10.6 μm. After discussing what properties semiconductors in general must exhibit to yield infrared waveguides at 10.6 μm, we describe the use of high band gap HgCdTe structures manufactured by isothermal evaporation diffusion process (E.D.R.I.). These waveguides are formed on cadmium telluride substrates and characterized by classical guided optics methods. They exhibit very low attenuation (< 0.5 dB/cm) and they can carry high power densities.

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A. Azema, J. Botineau, and Th. Brossat "New IR Optical Waveguides", Proc. SPIE 0651, Integrated Optical Circuit Engineering III, (3 November 1986); https://doi.org/10.1117/12.938164

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