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13 October 1986 Ellipsometric Methods of Characterization of Optical Thin Films
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Proceedings Volume 0652, Thin Film Technologies II; (1986) https://doi.org/10.1117/12.938378
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Abstract
Valuable information is lost when light is viewed merely as a photon flux, overlooking its essential polarization character. Consequently, conventional near-normal-incidence (R, T) optical monitors are basically inefficient. Instead, we recommend that the next generation of optical monitors use ellipsometry and photometry on the reflected and transmitted beams, simultaneously, to extract six parameters (R,ψΔr, T, ψt, Δt) at the observation angle of incidence and at each wavelength. This additional data can be used for more complete characterization of the deposited thin films, including anisotropy or index gradients. A simple test for anisotropy or inhomogeneity in a growing transparent thin film based on the ratio of complex transmission coefficients ρt = tan ψt exp(jΔt) is presented.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R M. A. Azzam "Ellipsometric Methods of Characterization of Optical Thin Films", Proc. SPIE 0652, Thin Film Technologies II, (13 October 1986); https://doi.org/10.1117/12.938378
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