Photo-CVD Silicon Nitride thin film have been deposited at low temperature for optoelectronic devices application. The main features of the thin layer deposition system are low substrate temperature (50+250°C) and absence of charged particles damage during deposition. The results obtained concern the relationship between refractive index, infrared spectra, chemical etching, step coverage, adhesion and deposition parameters.
"Low Temperature Photo-CVD Silicon Nitride Characterization", Proc. SPIE 0652, Thin Film Technologies II, (13 October 1986); doi: 10.1117/12.938386; https://doi.org/10.1117/12.938386