Low Temperature Photo-CVD Silicon Nitride Characterization

M Meliga; A Stano; S Tamagno

doi:10.1117/12.938386

13 October 1986 Low Temperature Photo-CVD Silicon Nitride Characterization

M Meliga; A Stano; S Tamagno

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Proceedings Volume 0652, Thin Film Technologies II; (1986) https://doi.org/10.1117/12.938386
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

Photo-CVD Silicon Nitride thin film have been deposited at low temperature for optoelectronic devices application. The main features of the thin layer deposition system are low substrate temperature (50+250°C) and absence of charged particles damage during deposition. The results obtained concern the relationship between refractive index, infrared spectra, chemical etching, step coverage, adhesion and deposition parameters.

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M Meliga, M Meliga, A Stano, A Stano, S Tamagno, S Tamagno, } "Low Temperature Photo-CVD Silicon Nitride Characterization", Proc. SPIE 0652, Thin Film Technologies II, (13 October 1986); doi: 10.1117/12.938386; https://doi.org/10.1117/12.938386

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