13 October 1986 Optical Constants of Individual Films in Multilayers
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Proceedings Volume 0652, Thin Film Technologies II; (1986) https://doi.org/10.1117/12.938375
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
An accurate technique for determining the optical constants of thin absorbing films as components in an amorphous semiconductor multilayer is presented. The case of films of Indium Tin Oxide (ITO) covered with a film of hydrogenated amorphous silicon has been investigated since it is of relevance in the solar cell field. Transmittance T, reflectance R and reverse reflectance R' were measured for the single films ( a-Si:H and ITO) on the substrate (quartz) and for the bilayer a-Si:H/ITO; from these measurements the indices of refraction (n) and extinction coefficients (k) were obtained. Depending on deposition temperature, the optical constants of a single a-Si:H film are remarkably different from those of the same film when it is part of a bilayer structure, especially in the short wavelength region. Also the value of the energy gap in the bilayer case is smaller than in the monolayer case.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F Demichelis, F Demichelis, G Kaniadakis, G Kaniadakis, E Mezzetti, E Mezzetti, A Tagliaferro, A Tagliaferro, E Tresso, E Tresso, P Rava, P Rava, } "Optical Constants of Individual Films in Multilayers", Proc. SPIE 0652, Thin Film Technologies II, (13 October 1986); doi: 10.1117/12.938375; https://doi.org/10.1117/12.938375

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