13 October 1986 Optical Study Of The Growth Of Ta2O5 and SiO2 Layers Obtained By Ion Assisted Deposition
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Proceedings Volume 0652, Thin Film Technologies II; (1986) https://doi.org/10.1117/12.938387
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Abstract
Argon ion bombardment conditions to obtain Ta205 and Si02 layers with a minimal optical absorption and a packing density close to one are defined. Applied to multilayers, these techniques give filters with an excellent stability of their optical properties when exposed to a moist atmosphere.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F Flory, G Albrand, C Montelymard, E Pelletier, "Optical Study Of The Growth Of Ta2O5 and SiO2 Layers Obtained By Ion Assisted Deposition", Proc. SPIE 0652, Thin Film Technologies II, (13 October 1986); doi: 10.1117/12.938387; https://doi.org/10.1117/12.938387
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