24 September 1986 Density Of States At Mid Gap In Hydrogenated Amorphous Silicon
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The density of states distributions near mid gap in a series of hydrogenated amorphous silicon films have been determined from space charge limited current measurements. The measurements were made on Au/aSi:H Schottky diode structures prepared by reactive rf sputter deposition. Samples with hydrogen concentrations near 16% as determined from infrared absorption had densities of states of 3x1014 states/cm3 eV. The experimental results indicate that high quality aSi:H films with low densities of states can be obtained under certain deposition conditions and that the density of states at mid gap is hydrogen concentration dependent with a minimum near 16%. For a given hydrogen concentration, films thicker than 2 um yielded the lowest density of states consistent with a model in which diffusion currents can be neglected and where surface and interface layers have a higher defect density than the bulk of the film.
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E Yahya, E Yahya, H R Shanks, H R Shanks, } "Density Of States At Mid Gap In Hydrogenated Amorphous Silicon", Proc. SPIE 0653, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion V, (24 September 1986); doi: 10.1117/12.938348; https://doi.org/10.1117/12.938348

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