24 September 1986 Hydrogenated Amorphous Silicon Films Prepared By rf Sputtering In He/H2
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Abstract
A preliminary report of some optical and electron spin resonance (ESR) properties of hydrogenated amorphous silicon (aSi:H) films prepared by rf sputtering in 10 mtorr He, 0.5 mtorr H2, and varying rf power is presented. As the rf power is decreased from 3.3 to 0.27 W/cm2, the deposition rate also decreases but the concentration of Si-H and Si-H2 bonds, the optical energy gap Eq, and the dangling bond spin density all increase. In particular, the optical gap of the He/H2 sputtered films increases from 1.65 to 2.09 eV and is considerably higher than for films sputtered by Ar/H2 under similar conditions. The gap is, however, only slightly higher than that of Ar/H2 sputtered films which contain the same proportion of Si-H2 bonds. The dangling bond spin density is somewhat lower in He/H films than in Ar/H2 deposited at the same rate, and decreases to about lx1016 cm-3 at high rf power.
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M L Albers, H R Shanks, J Shinar, "Hydrogenated Amorphous Silicon Films Prepared By rf Sputtering In He/H2", Proc. SPIE 0653, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion V, (24 September 1986); doi: 10.1117/12.938346; https://doi.org/10.1117/12.938346
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