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22 November 1986 Characterization of p-type Hg1_xCdxTe by infrared reflectance
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Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938536
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Abstract
An optical reflectance method is utilized to determine the effective acceptor concentra-tion of p-type Hgl_xCdxTe (o.2≤ x≤ 0.3). This method is based on the analysis of the spectral reflectance in the plasmon-phonon region of the samples at room temperature, and is capable of determining acceptor densities as low as 5.1015 cm-3. Experimental results of p-type bulk crystals and of p-type layers on n-type bulk crystals are presented, and the prac-tical limits of the method are discussed.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J Baars, V Hurm, T Jakobus, H. Seelewind, and J Ziegler "Characterization of p-type Hg1_xCdxTe by infrared reflectance", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938536
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