22 November 1986 Damage and rapid thermal annealing of In implanted Hg0.3Cd0.7Te
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Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938542
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Abstract
Rutherford backscattering analysis was used to study the damage due to In implantation into Hgl_xCdxTe (x = 0.7). We show that the defects can be removed successfuly by rapid thermal annealing (T = 440°C, t = 10s).
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C Uzan, R Kalish, V Richter, and T Nguyen Duy "Damage and rapid thermal annealing of In implanted Hg0.3Cd0.7Te", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938542; https://doi.org/10.1117/12.938542
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