22 November 1986 Electrical And Physical Properties Of High Quality Liquid Phase Epitaxy Of Hg0.78Cd0.22Te On CdZnTe
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Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938543
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Abstract
Some physical and electrical properties of liquid phase epitaxial (LPE) layers of Hg0.78Cd0.22Te grown on CdZnTe substrates are presented in this paper. In order to qualify these epilayers, 64 x 64 arrays of backside illuminated photovoltaic detectors were successfully manufactured. The high performances obtained on these detectors demonstrate that LPE of Hg0.78Cd0.22Te remains the most suitable material for such high density arrays.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D Amingual, G L Destefanis, S Guillot, J L Ouvrier-Buffet, S Paltrier, and D Zenatti "Electrical And Physical Properties Of High Quality Liquid Phase Epitaxy Of Hg0.78Cd0.22Te On CdZnTe", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938543; https://doi.org/10.1117/12.938543
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