Electrical Characterisation Of Epitaxial Mercury Cadmium Telluride (CMT)

V Vincent; C Wilson; J M Lansdowne

doi:10.1117/12.938538

22 November 1986 Electrical Characterisation Of Epitaxial Mercury Cadmium Telluride (CMT)

V Vincent, C Wilson, J M Lansdowne

Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938538
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

Hall and resistivity data are presented for epitaxial mercury cadmium telluride layers grown by the MOVPE IMP technique. The effect of variation of substrate material and its orientation upon the Hall characteristics of the layers is discussed and a correlation between substrate orientation and anomalous p-character is reported. This correlation is explained in terms of a skin effect, which may be present as a surface or an interfacial layer. The effect of such a skin when annealing material from p-type to n-type has been investigated. The conditions favouring the observation of skin effect have been considered. The Hall parameters presented for CMT grown on sapphire indicate layers with low carrier concentration (n ~ 2 x 10¹⁴ cm^-3) can be grown by this MOVPE process. Parameters on both n and p type material are reported.

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V Vincent, C Wilson, and J M Lansdowne "Electrical Characterisation Of Epitaxial Mercury Cadmium Telluride (CMT)", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938538

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