22 November 1986 Epitaxial Growth Of CVD CdZnTe As Substrate For HgCdTe Detectors
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Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938554
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Preliminary experimental results of epitaxial growth of CdZnTe on sapphire, silicon and single crystal CdZnTe via a low pressure chemical vapor deposition process are reported. The CdZnTe layers grown were smooth and specular in appearance. The infrared transmission trace of CdZnTe grown on silicon and sapphire showed good transmission through the film. The X-ray diffraction scan of CdZnTe on silicon showed that the film is epitaxial with a lattice constant of 6.45 Å.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jitendra S Goela, Jitendra S Goela, Raymond L Taylor, Raymond L Taylor, "Epitaxial Growth Of CVD CdZnTe As Substrate For HgCdTe Detectors", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938554; https://doi.org/10.1117/12.938554


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