22 November 1986 Growth of Hg1-xCdxTe from Te Solvent By The Travelling Heater Methode
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Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938550
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Abstract
Crystals of Hgl-xCdTe were grown by the Travelling Heater Method (THM) with Te as a solvent zone and aiameers up to 15 mm. Microprobe measurements show that the new developed furnace is suitable for the growth of HgCdTe-crystals. A new method to produce feed material with larger diameters than 10 mm is presented.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J Schmitz, H Walcher, and J Baars "Growth of Hg1-xCdxTe from Te Solvent By The Travelling Heater Methode", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938550; https://doi.org/10.1117/12.938550
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