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22 November 1986 II-VI Semiconductor Superlattices : New Infrared Materials
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Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938534
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Abstract
IC-VI superlattices, recently grown by molecular beam epitaxy, exhibit far more diverse characteristics than the conventional GaAs-AlxGa1_xAs heterostructures, in particular because of the zero-gap band strcuture of some binary and ternary mercury compounds. The superlattices band Structure can be calculated as a function of the layers thicknesses and the temperature, and the calculations are confirmed by optical and magneto--optical experiments in the case of HgTe-CdTe saperlattices. Finally, these new systems present interesting potential applications as infrared materials.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J M Berroir and Y Guldner "II-VI Semiconductor Superlattices : New Infrared Materials", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938534
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