MBE Growth Of CdTe And ZnCdTe On GaAs Substrates

C J Summers; A Torabi; B K Wagner; J D Benson; S R Stock; P C Huang

doi:10.1117/12.938553

22 November 1986 MBE Growth Of CdTe And ZnCdTe On GaAs Substrates

C J Summers, A Torabi, B K Wagner, J D Benson, S R Stock, P C Huang

Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938553
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

CdTe and ZnCdTe layers have been grown on (001) GaAs substrates between 150-350°C for growth rates of 0.5-2 μm/h. For CdTe, (001) and (111) orientations were observed, whereas only the (001) orientation was obtained for ZnCdTe layers. The layers, structural and optical properties were determined from SEM, double-crystal rocking-curve and photoluminescence studies.

Citation Download Citation

C J Summers, A Torabi, B K Wagner, J D Benson, S R Stock, and P C Huang "MBE Growth Of CdTe And ZnCdTe On GaAs Substrates", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938553

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available