22 November 1986 MBE Growth Of CdTe And ZnCdTe On GaAs Substrates
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Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938553
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Abstract
CdTe and ZnCdTe layers have been grown on (001) GaAs substrates between 150-350°C for growth rates of 0.5-2 μm/h. For CdTe, (001) and (111) orientations were observed, whereas only the (001) orientation was obtained for ZnCdTe layers. The layers, structural and optical properties were determined from SEM, double-crystal rocking-curve and photoluminescence studies.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C J Summers, C J Summers, A Torabi, A Torabi, B K Wagner, B K Wagner, J D Benson, J D Benson, S R Stock, S R Stock, P C Huang, P C Huang, } "MBE Growth Of CdTe And ZnCdTe On GaAs Substrates", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938553; https://doi.org/10.1117/12.938553
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