Pb1-xEuxSe is a promising material for IR devices. The band gap becomes larger with the relative content of Europium. The preparation of Pb1-xEuxSe by molecular beam epitaxy and the properties of these layers will be described.
K H Bachem,
"Pb1-xEuxSe For IR Device Applications", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938560; https://doi.org/10.1117/12.938560