22 November 1986 Pb1-xEuxSe For IR Device Applications
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Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938560
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Pb1-xEuxSe is a promising material for IR devices. The band gap becomes larger with the relative content of Europium. The preparation of Pb1-xEuxSe by molecular beam epitaxy and the properties of these layers will be described.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P Norton, P Norton, K H Bachem, K H Bachem, M Tacke, M Tacke, } "Pb1-xEuxSe For IR Device Applications", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); doi: 10.1117/12.938560; https://doi.org/10.1117/12.938560

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