6 October 1986 Ultrafast Surface Barrier Photodetectors
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We present results of an investigation into interdigital Schottky barrier photodetectors, using silicon-on-sapphire as an exemplary material. The steady-state and pulsed characteristics of the devices have been studied, both theoretically and experimentally, with good agreement being found in both regimes. In particular, the effective carrier lifetime in the material was found to be approximately 400 psec, and the response time of a small area device was found to be less than 30 psec. In addition, for purposes of comparison, some measurements are reported using this structure on bulk silicon.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R J Seymour, R J Seymour, B K Garside, B K Garside, R E Park, R E Park, } "Ultrafast Surface Barrier Photodetectors", Proc. SPIE 0663, Laser Radar Technology and Applications I, (6 October 1986); doi: 10.1117/12.938652; https://doi.org/10.1117/12.938652

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