Paper
26 September 1986 Far Infrared Photoconductive Detectors
Jean Leotin
Author Affiliations +
Proceedings Volume 0666, Far-Infrared Science and Technology; (1986) https://doi.org/10.1117/12.938823
Event: 1986 Quebec Symposium, 1986, Quebec City, Canada
Abstract
Far infrared photoconductive detection is considered in the wavelength range 30 to 1000)π m. High sensitivity direct detection in a low photon flux background, as typically met in spaceborne astrophysics measurements, is emphasized. Recent advances in extrinsic germanium photoconductors, particularly stressed Ge:Ga are reported. Wideband photoconductive detection with Hgi-xCdxTe and narrow band magnetically tunable photodetection based on InSb and GaAs are reviewed. Prospects for new devices and supporting technologies are discussed.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean Leotin "Far Infrared Photoconductive Detectors", Proc. SPIE 0666, Far-Infrared Science and Technology, (26 September 1986); https://doi.org/10.1117/12.938823
Lens.org Logo
CITATIONS
Cited by 12 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors

Photoresistors

Magnetism

Gallium arsenide

Germanium

Absorption

Field effect transistors

RELATED CONTENT

High-performance GaAs homojunction far-infrared detectors
Proceedings of SPIE (April 08 1998)
GaAs BIB photodetector development for far-infrared astronomy
Proceedings of SPIE (November 04 2004)
Novel far-infrared detectors for space applications
Proceedings of SPIE (April 08 1999)
Far infrared photoconductors
Proceedings of SPIE (November 01 1990)

Back to Top