14 October 1986 Control Of Bistable Semiconductor Lasers
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Proceedings Volume 0667, Optical Chaos; (1986) https://doi.org/10.1117/12.938852
Event: 1986 Quebec Symposium, 1986, Quebec City, Canada
Semiconductor lasers with axially non-uniform structures are known to exhibit bistable charactreristics which can be switched by the application either of electrical or optical pulses. The paper describes the physical mechanism of the appearance of bistable characteristics in InGaAsP/InP DH lasers and gives accounts why this laser tends to bistable operation in comparison with GaAs lasers. Temperature dependence and control of hysteresis width by non-uniform pumping are also discussed.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Kamiya, Takeshi Kamiya, Hai-Feng Liu, Hai-Feng Liu, } "Control Of Bistable Semiconductor Lasers", Proc. SPIE 0667, Optical Chaos, (14 October 1986); doi: 10.1117/12.938852; https://doi.org/10.1117/12.938852

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