12 November 1986 Epitaxial Growth Of Thin Semiconductor Films By Pulsed Laser Evaporation: Damage And Vaporization Of Cdte, Cd And Insb Targets Induced With Nd:Yag Laser.
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Abstract
The surface morphology of CdTe, Cd and InSb targets following vacuum pulsed laser evaporation has been examined. Vaporization of CdTe does not change the stoichiometric conditions of the surface, but precipitation of In is observed in the case of InSb. A stable vaporization rate can be obtained with a scanning laser beam after an initial layer of material is removed from the target and a characteristic surface structure is formed.
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Jan J Dubowski, "Epitaxial Growth Of Thin Semiconductor Films By Pulsed Laser Evaporation: Damage And Vaporization Of Cdte, Cd And Insb Targets Induced With Nd:Yag Laser.", Proc. SPIE 0668, Laser Processing: Fundamentals, Applications, and Systems Engineering, (12 November 1986); doi: 10.1117/12.938889; https://doi.org/10.1117/12.938889
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