12 November 1986 Pulsed Laser Annealing Of Silicon And Metal/Silicon Systems
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Proceedings Volume 0668, Laser Processing: Fundamentals, Applications, and Systems Engineering; (1986); doi: 10.1117/12.938890
Event: 1986 Quebec Symposium, 1986, Quebec City, Canada
Abstract
Epitaxial regrowth of ion implanted silicon and formation of metal silicides through the reaction of Si single crystals with thin deposited metal (Pt, Pd, Cr, Mo, Ti) films was obtained with different (ruby, Nd:glass, excimer) pulsed laser sources. Temperature profiles and evolutions into the samples were calculated. It was found that partial and even complete reactions of the metal films with silicon can be obtained at laser fluences lower than those needed for melting of the materials. The morphology of the irradiated surfaces was studied with a scanning electron microscope. Formation of damage ripple patterns is discussed. Epit-axial regrowth and silicide formation without surface damage of the irradiated materials was obtained by using excimer lasers.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E D'Anna, G Leggieri, A Luches, G Majni, M R Perrone, "Pulsed Laser Annealing Of Silicon And Metal/Silicon Systems", Proc. SPIE 0668, Laser Processing: Fundamentals, Applications, and Systems Engineering, (12 November 1986); doi: 10.1117/12.938890; https://doi.org/10.1117/12.938890
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KEYWORDS
Silicon

Metals

Excimer lasers

Semiconductor lasers

Silicon films

Scanning electron microscopy

Chromium

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