12 November 1986 Solid Phase Transformations During CW Laser Processing
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We review recent advances in studies of solid phase crystallization of amorphous silicon at high temperatures. The kinetics of solid phase epitaxy and random crystallization have been investigated over the temperature range from 550°C to -1350°C using cw Ar laser and flashlamp-pumped dye laser heating and time-resolved reflectivity measurements of crystallization rate. We examine the interplay between solid phase epitaxy and random crystallization in lightly doped films, and the temperature and concentration dependent competi-tion between crystallization, precipitation and phase separation in amorphous layers containing In and As at concentrations greater than 0.5 at.%.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G L Olson, J A Roth, "Solid Phase Transformations During CW Laser Processing", Proc. SPIE 0668, Laser Processing: Fundamentals, Applications, and Systems Engineering, (12 November 1986); doi: 10.1117/12.938887; https://doi.org/10.1117/12.938887

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