10 November 1986 Thermal Model Of The Double-Heterostructure Burrus-Type Light-Emitting Diode
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Proceedings Volume 0670, Optical Fibres and Their Applications IV; (1986) https://doi.org/10.1117/12.938964
Event: Optical Fibres and Their Applications, 1986, Warsaw, Poland
Abstract
The three-dimensional thermal model of the homojunction Burrus-type light-emitting diode, which was presented in the previous work, is adapted to the double-heterostructure Burrus-type light-emitting diode. The dependence of the parameters of the model on the AlAs mole fraction, x, in the passive layers is taken into account to this end. It appears that from the point of view of the lowest temperature in the center of the active region, both low and high values of x are favorable and the most unfavorable value of x seems to be about 0.25. On the other hand, from the point of view of the most homogeneous temperature distribution within the active region, x should be as small as possible.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wlodzimierz Nakwaski, Wlodzimierz Nakwaski, } "Thermal Model Of The Double-Heterostructure Burrus-Type Light-Emitting Diode", Proc. SPIE 0670, Optical Fibres and Their Applications IV, (10 November 1986); doi: 10.1117/12.938964; https://doi.org/10.1117/12.938964
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