9 March 1987 Growth Of Laser Crystals By Heat Exchanger Method (HEM)
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The adaptation of the Heat Exchanger Method for the growth of high quality laser crystals, viz., Co:MgF2 and Ti:Al203, is discussed. In case of Co:MgF2 problems associated with dopant polarization and reaction with the crucible have been solved to produce 1 wt.% CoF2 crystals. For Ti:Al201 crystals 10 cm diameter boules have been grown. This material does not exhibit the 800 nm absorption and laser rods with uniform Ti concentration can be fabricated from these boules.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C P Khattak, C P Khattak, A N Scoville, A N Scoville, "Growth Of Laser Crystals By Heat Exchanger Method (HEM)", Proc. SPIE 0681, Laser and Nonlinear Optical Materials, (9 March 1987); doi: 10.1117/12.939619; https://doi.org/10.1117/12.939619


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