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6 November 1986 High Performance MWIR and LWIR (Hg,Cd)Te Heterostructure Photodiodes
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(Hg,Cd)Te heterostructures have been grown liquid phase epitaxially from tellurium rich solutions on CdTe and (Cd,Zn)Te substrates. Both MWIR detectors sensitive in the 3-5 μm spectral region and LWIR detectors sensitive in the 8-14 µm spectral region have been fabricated in the heterostructures. Detectors with high RoA (low noise) and high quantum efficiency (high signal) have been fabricated. For the MWIR detectors, quantum efficiency in excess of 75 percent and RoA values in excess of 107 ohm cm2 at 80K have been demonstrated for λCo ~ 5.5 µm. For the LWIR detectors RoA values of ~ 106 ohm cm2 have been demonstrated at 40K for λCo ~ 11 μm. A correlation of the trap energies established via carrier lifetime and DLTS measurements with the depletion width - capacitance data indicates the p-n junction to be located at the heterostructure interface.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. R. Vydyanath, P. B. Ward, S. R. Hampton, L. Fishman, J. Slawinski, C. Devaney, J. Ellsworth, and T. Krueger "High Performance MWIR and LWIR (Hg,Cd)Te Heterostructure Photodiodes", Proc. SPIE 0686, Infrared Detectors, Sensors, and Focal Plane Arrays, (6 November 1986);

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