6 November 1986 Studies of Boron Implantation Through Photochemically Deposited SiO2 Films on Hg1-xCdxTe
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Abstract
Variable temperature Hall and resistivity measurements have been used to monitor the changes in carrier behavior in p-type Hg1-xCdxTe when boron ions are implanted through photochemically deposited SiO2. The formation of an n-type layer is demonstrated. Quantitative and non-destructive determinations of the absolute 10B concentration and distribution has been obtained by the novel method of neutron depth profiling. As expected, the boron distributions in the SiO2 films and Hg1-xCdxTe are strongly dependent upon the ion implant energy. However, negligible changes in the boron depth profiles were found after 200°C anneals. The present results are briefly related to the performance behavior of mid-wavelength infrared (MWIR) sensors produced via generic ion implantation procedures.
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R. C. Bowman, R. E. Robertson, J. F. Knudsen, R. G. Downing, "Studies of Boron Implantation Through Photochemically Deposited SiO2 Films on Hg1-xCdxTe", Proc. SPIE 0686, Infrared Detectors, Sensors, and Focal Plane Arrays, (6 November 1986); doi: 10.1117/12.936521; https://doi.org/10.1117/12.936521
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