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9 April 1987 Measurements on a Proposed Short Wavelength Laser System in Xenon III
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Measurements on a proposed short wavelength laser system at 108.9 nm in doubly ionized Xenon are reported. Previous electron spectroscopy data indicate that a population inversion should be created between the Xe III states 5s0 5p6 1S0 and 5s0 5p6 1P1 due to selective Auger decay following photoionization of a 4d electron from the neutral atom. Using a high repetition rate laser produced plasma x-ray source and time correlated photon counting, we measured the lifetime of the 1S0 upper state to be 4.75 ±0.15 nsec with a collisional quenching rate of 2.8±0.2x107 (torr-sec)-1. We also determined the Auger branching ratio into the upper and lower states by measuring fluorescence intensities. Implementation of this laser scheme is discussed including limitations in photopumping short wavelength lasers due to amplified spontaneous emission.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. C. Kapteyn, M. M. Murnane, R. W. Falcone, G. Kolbe, and R. W. Lee "Measurements on a Proposed Short Wavelength Laser System in Xenon III", Proc. SPIE 0688, Multilayer Structures & Laboratory X-Ray Laser Research, (9 April 1987);

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