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9 April 1987 Silicon Diffraction Gratings For Multilayer Structures
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Abstract
Anisotropic etching was used to fabricate diffraction gratings on silicon wafers for use as substrates for layered synthetic multilayers. We worked with (110) and (100) oriented wafers to achieve etched sidewall angles of 35.3°, 46.5°, 54.7°, and 90°. Contact lithography was used to print gratings with a 20p period in order to evaluated the quality of the etched sidewalls. Projection lithography was used to print gratings with a 2μ period. Blazed gratings were fabricated from (111) oriented wafers cut 6° off the normal to the growth direction. A crystal alignment technique is described that allowed us to align the gratings to better than 0.1° of the correct crystal direction. Measurements are reported on the smoothness of etched silicon surfaces using three different etches.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. R. Ciarlo and D. E. Miller "Silicon Diffraction Gratings For Multilayer Structures", Proc. SPIE 0688, Multilayer Structures & Laboratory X-Ray Laser Research, (9 April 1987); https://doi.org/10.1117/12.964838
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