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12 August 1986 Curved Silicon Substrates For Multilayer Structures
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Two-dimensional curved surfaces, which may be suitable for X-ray reflective. lenses of the multilayer type, have been produced using polished. single crystal {110} silicon. wafers. The curvature was achieved using stressed thin. films of grown silicon. dioxide and deposited. silicon nitride. In addition to basic experimental studies with planer structures to determine stress values and predictive equations, the paper describes several methods used for stressing a preferentially etched deep, groove silicon structure. The latter structure is needed for non cylindrical surfaces. Effects which limited the predictability and surface quality of the curved surfaces were the thickness variation of the silicon, wafers and the occurrence of dislocation slip lines on the polished. surface- The latter was primarily due. to stress on {1111 'lanes at high temperature.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. C. Woodbury, H. Fan, L. V. Knight, and J. M. Thorne "Curved Silicon Substrates For Multilayer Structures", Proc. SPIE 0691, X-Ray Imaging II, (12 August 1986);

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