28 October 1987 The Optical Characterization Of Electronic Materials
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Proceedings Volume 0699, Laser and Opto-Electronic Technology in Industry: State-of-the-Art Review; (1987) https://doi.org/10.1117/12.936920
Event: Laser and Opto-Electronic Technology in Industry: State of the Art Review, 1986, Xiamen, China
Abstract
Three different examples for characterizing parallel-sided specimens with optical techniques are given; spectral emittance of an InAs specimen; AIRS (Angle of Incidence Reflectance Spectrometry) analysis of a III-V quaternary; calculations for AIRS measurerments on a silicon-like substrate having a relatively thick layer with a larger refractive index. Complete formulas ,along with appropriate approximations, are given. Starting with Maxwell's Equations, both the characteristic and Fresnel matrices are developed for the abrupt interface and homogeneous cases followed by indicated steps leading to the practical formulas. Also included is a discussion of dispersion and its relationship to the simultaneity of the duality of electro-magnetic radiation.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roy F. Potter, Roy F. Potter, } "The Optical Characterization Of Electronic Materials", Proc. SPIE 0699, Laser and Opto-Electronic Technology in Industry: State-of-the-Art Review, (28 October 1987); doi: 10.1117/12.936920; https://doi.org/10.1117/12.936920
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