Frequency Locking Of A 850 nm External-Cavity Semiconductor Laser On A Doppler-Free Cs-D[sub]2[/sub] Line

M. De Labachelerie; P. Cerez

doi:10.1117/12.937049

10 July 1987 Frequency Locking Of A 850 nm External-Cavity Semiconductor Laser On A Doppler-Free Cs-D₂ Line

M. De Labachelerie, P. Cerez

Proceedings Volume 0701, 1986 European Conf on Optics, Optical Systems and Applications; (1987) https://doi.org/10.1117/12.937049
Event: 1986 International European Conference on Optics, Optical Systems, and Applications, 1986, Florence, Italy

Abstract

Preliminary experimental results concerning frequency stabilization of a 850 nm external-cavity semi-conductor laser on the cesium D2 absorption line using a simple saturated absorption technique are presented. The relative frequency stability reaches 10-12 over a 1 sec. averaging time.

Citation Download Citation

M. De Labachelerie and P. Cerez "Frequency Locking Of A 850 nm External-Cavity Semiconductor Laser On A Doppler-Free Cs-D₂ Line", Proc. SPIE 0701, 1986 European Conf on Optics, Optical Systems and Applications, (10 July 1987); https://doi.org/10.1117/12.937049

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