18 May 1987 Photoluminescence Imaging As A Technique To Control The Uniformity Of The Electronical Properties Of Semiconductor Surface During Device Fabrication
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Proceedings Volume 0702, International Topical Meeting on Image Detection and Quality; (1987) https://doi.org/10.1117/12.966783
Event: International Topical Meeting on Image Detection and Quality, 1986, Paris, France
Abstract
It has been shown recently that integrated photoluminescence (PL) measurements can be used as a probe of the "electronical quality" of semiconductor surfaces and is perfectly well adapted to control individual steps in the processing of semiconductor devices based on InP.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Lallemand, M. Garrigues, S. K. Krawczyk, "Photoluminescence Imaging As A Technique To Control The Uniformity Of The Electronical Properties Of Semiconductor Surface During Device Fabrication", Proc. SPIE 0702, International Topical Meeting on Image Detection and Quality, (18 May 1987); doi: 10.1117/12.966783; https://doi.org/10.1117/12.966783
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