20 November 1986 High Quantum Efficiency In Silicon Photovoltaic Cells
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Proceedings Volume 0706, Photovoltaics for Commercial Solar Power Applications; (1986) https://doi.org/10.1117/12.937228
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
Abstract
Recent work with high-efficiency solar cells has led to improvements in optical efficiency to the point where short-circuit currents of 40.8 mA/cm2 have been measured under terrestrial sunlight in 380 micron thick cells; this is over 90% of the theoretical maximum for silicon. Three parts of the design of these cells contribute to the high currents: First, careful grid design, surface texture, and a double-layer antireflection coating reduce the reflection loss to approximately 4% over the entire solar spectrum. Second, the use of high-purity float-zone silicon, coupled with an effective back-surface-field structure and an aluminum back surface reflector, is responsible for the efficient collection of carriers generated by infrared light, which can penetrate through the entire cell. Internal quantum efficiencies of .85 at 1050 nm and .56 at 1100 nm have been achieved. Finally, the use of a thin emitter, the optimization of the emitter doping level and the passivation of the front surface have allowed internal quantum efficiencies exceeding 0.95 over the entire visible range. The possibility of achieving quantum efficiencies greater than 1 for ultraviolet light is also discussed.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher Keavney, Christopher Keavney, Michael M. Sanfacon, Michael M. Sanfacon, } "High Quantum Efficiency In Silicon Photovoltaic Cells", Proc. SPIE 0706, Photovoltaics for Commercial Solar Power Applications, (20 November 1986); doi: 10.1117/12.937228; https://doi.org/10.1117/12.937228
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