Translator Disclaimer
23 February 1987 A GaAs 8:1 Multiplexer And 1:8 Demultiplexer Chip Set For High-Speed Transmission Of Television And Digital Data
Author Affiliations +
Proceedings Volume 0716, High Frequency Optical Communications; (1987) https://doi.org/10.1117/12.937467
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
Abstract
The inherent performance advantages of GaAs have been extensively demonstrated and make it very attractive as a semiconductor material for the fabrication of high-speed digital ICs. Its high electron mobility and high peak electron drift velocity qualify GaAs as the material for developing future high-speed integrated circuits. In addition to its electron transport properties, GaAs has an intrinsic carrier concentration that is low enough to yield semi-insulating substrates, reducing device interconnect capacitance. Recent advances in processing and circuit technology have made possible the fabrication of medium-scale integration ICs with production-oriented repeatability.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Kane, W McGinn, R Huq, D C Fowlis, and J Herman "A GaAs 8:1 Multiplexer And 1:8 Demultiplexer Chip Set For High-Speed Transmission Of Television And Digital Data", Proc. SPIE 0716, High Frequency Optical Communications, (23 February 1987); https://doi.org/10.1117/12.937467
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top