Heterojunction Waveguide Photodetectors

J E. Bowers; C A Burrus

doi:10.1117/12.937460

23 February 1987 Heterojunction Waveguide Photodetectors

J E. Bowers, C A Burrus

Proceedings Volume 0716, High Frequency Optical Communications; (1987) https://doi.org/10.1117/12.937460
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

Conventional PIN detectors have bandwidth efficiency products of up to 38 GHz. This product is primarily limited by the hole transit time through the depleted layer. We describe a pInP/nInGaAsP/nInP heterojunction waveguide PIN photodetector that provides for light absorption perpendicular to current collection, a feature that results in high-speed, high-efficiency and relatively bias-insensitive operation. The 30 μm waveguide length corresponds to 6 absorption lengths, assuming an optical confinement of 30% and a material absorption coefficient of 0.7 μm.-1 Our uncoated, packaged device has an impulse response of 40 ps (Tektronix S-4 sampling head) and efficiency of 25% at zero bias.

Citation Download Citation

J E. Bowers and C A Burrus "Heterojunction Waveguide Photodetectors", Proc. SPIE 0716, High Frequency Optical Communications, (23 February 1987); https://doi.org/10.1117/12.937460

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