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14 January 1987 GaInAsSb Detectors And Lasers For Mid-Infrared Optical Communications
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Proceedings Volume 0722, Components for Fiber Optic Applications; (1987) https://doi.org/10.1117/12.937666
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
Abstract
Room-temperature Ga0.82 InO.18As0.17Sb0.83/GaSb photodiodes have been fabricated for use at wavelengths to 2.3μpm. Back-illuminated heterojunction p-n photodiodes show high external quantum efficiency (65%) for wavelengths between 1.8 and 2.3 μm. Front-illuminated pin homojunction photodiodes have an impulse response of 110 ps and respond to pseudorandom modulation at rates as high as 4 Gbit/s. Double heterostructure Ga0.841n0.16As0.15Sb0.85/A10.34Ga0.66As0.04Sb0.96 lasers have pulsed threshold current densities as low as 3.5 kA/cm2 at room temperature and operate cw at temperatures of up to 235K.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. L. Zyskind, C. A. Burrus, C. Caneau, A. G. Dentai, M. A. Pollack, A. K. Srivastava, J. E. Bowers, and J. C. DeWinter "GaInAsSb Detectors And Lasers For Mid-Infrared Optical Communications", Proc. SPIE 0722, Components for Fiber Optic Applications, (14 January 1987); https://doi.org/10.1117/12.937666
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