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14 January 1987 VPE Growth Of InGaAs For Large Area And Extended Spectral Range Photodetectors
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Proceedings Volume 0722, Components for Fiber Optic Applications; (1987)
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
The hydride vapor phase epitaxy (VPE) technique has been used to grow In(x) Ga(1-x) As on InP substrates with 0<x<0.8. The "double barrel" VPE reactor along with relevant growth parameters will be discussed. The effects of temperature, flow rates and reactor geometry on compositional and thickness uniformity of grown layers will be described. An automatic probing station has been used to evaluate devices (i.e. p-i-n photodetectors) across the whole wafer. Device characteristics will be correlated with the compositional and thickness variations of grown layers on that wafer. Finally, detectors manufactured from the above wafers will be discussed, i.e.: (a) detectors with extended spectral response from 0.8 microns to 2.55 microns, as opposed to standard In(0.53) Ga(0.44) As detectors which respond in the range of 1.0 - 1.7 microns; (b) operational characteristics of large area In(0.53) Ga(0.44) As detectors with diameters of 1.0, 2.0 and 3.0mm respectively, will be presented and discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. S. Ban, M. Popov, G. C. Erickson, F. D. Speer, D. A. Gay, and G. H. Olsen "VPE Growth Of InGaAs For Large Area And Extended Spectral Range Photodetectors", Proc. SPIE 0722, Components for Fiber Optic Applications, (14 January 1987);

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