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14 January 1987 High Power Semiconductor Lasers
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Proceedings Volume 0723, Progress in Semiconductor Laser Diodes; (1987) https://doi.org/10.1117/12.937677
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
Abstract
In this paper we will provide a summary of the principles which govern the operation of major types of high power(CW) GaAlAs/GaAs and GaInAsP/InP single mode lasers which are either commercially available or have demonstrated exceptional laboratory results. In addition, a summary of the operation of novel structures such as phase-locked arrays will also be presented.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Figueroa, C. Morrison, and L . Zinkiewicz "High Power Semiconductor Lasers", Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); https://doi.org/10.1117/12.937677
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