14 January 1987 Influence Of Parasitic Elements On Laser Diode Characterization By Electrical Noise Measurements
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Proceedings Volume 0723, Progress in Semiconductor Laser Diodes; (1987) https://doi.org/10.1117/12.937687
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
Abstract
The influence of parasitic elements on the wideband electrical noise in semiconductor lasers is investigated theoretically and experimentally. The results show that the maximum small-signal modulation bandwidth can be determined from measurements of the electrical noise spectrum. A small difference of the peak frequency in the optical intensity noise and the peak frequency in the electrical noise spectra is observed (about 200 MHz), and is explained by introducing the nonlinear intrinsic diode impedance in the parasitic model.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. A. Andrekson, P. Andersson, "Influence Of Parasitic Elements On Laser Diode Characterization By Electrical Noise Measurements", Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); doi: 10.1117/12.937687; https://doi.org/10.1117/12.937687
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