14 January 1987 Small-Signal Modulation Of P-Substrate Mass-Transported Gainasp/Inp Lasers
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Proceedings Volume 0723, Progress in Semiconductor Laser Diodes; (1987) https://doi.org/10.1117/12.937682
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
Abstract
The modulation characteristics of GaInAsP diode lasers grown on p-type substrates have been studied on devices in which the parasitic bonding pads have been eliminated. The lasers have thresholds as low as 4.5 mA. The small-signal sinusoidal response is comparable to similar lasers made on n-type substrates. A small-signal -3 dB frequency as high as 16.4 GHz has been measured with a 175-μm-long laser.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Z. Tsang, D. Z. Tsang, Z. L. Liau, Z. L. Liau, } "Small-Signal Modulation Of P-Substrate Mass-Transported Gainasp/Inp Lasers", Proc. SPIE 0723, Progress in Semiconductor Laser Diodes, (14 January 1987); doi: 10.1117/12.937682; https://doi.org/10.1117/12.937682
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