Characteristics And Applications Of Semiconductor Photodiodes From The Visible To The X-Ray Region

J. Barth; E. Tegeler; M. Krisch; R. Wolf

doi:10.1117/12.964949

1 January 1986 Characteristics And Applications Of Semiconductor Photodiodes From The Visible To The X-Ray Region

J. Barth, E. Tegeler, M. Krisch, R. Wolf

Proceedings Volume 0733, Soft X-Ray Optics and Technology; (1986) https://doi.org/10.1117/12.964949
Event: Soft X-Ray Optics and Technology, 1987, Berlin, Germany

Abstract

The quantum efficiencies of a Si pnn⁺ and a GaAsP Schottky photodiode have been measured in the photon energy range from 5 to 1000 eV. The efficiency is generally much higher than that of photoemissive detectors. The performance of the Si diode is affected by soft X-ray exposure, but for the Schottky diode a stable quantum efficiency is observed over the entire spectral range making this device attractive for many applications.

Citation Download Citation

J. Barth, E. Tegeler, M. Krisch, and R. Wolf "Characteristics And Applications Of Semiconductor Photodiodes From The Visible To The X-Ray Region", Proc. SPIE 0733, Soft X-Ray Optics and Technology, (1 January 1986); https://doi.org/10.1117/12.964949

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