1 January 1987 Sub-Picosecond Raman Spectroscopy Of Semiconductors
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Proceedings Volume 0742, Laser Applications to Chemical Dynamics; (1987); doi: 10.1117/12.966901
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
Recent advances in laser and optical detector technology have made it possible to perform time resolved Raman scattering experiments on opaque semiconductors with sub-picosecond temporal resolution. This has allowed us to directly study the initial stages in the relaxation of energetic carriers in 111-V semiconductors such as GaAs and Gal1-xAlxAs. The generation of a non-equilibrium population of longitudinal optic (LO) phonons by a well characterized population of energetic carriers has been temporally resolved in GaAs. Changes in the screening of the LO phonons due to the creation of a high density of hot carriers and their cooling have also been observed. These studies have been extended to the alloy system Gal1-xAlxAs to characterize the changes introduced into the hot carrier relaxation processes by alloy disorder effects. The modification of the carrier relaxation processes due to the presence of strong carrier-carrier scattering was observed using the hot luminescence which accompanied the Raman scattering at high excitation levels.
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J. C. Tsang, J. A. Kash, "Sub-Picosecond Raman Spectroscopy Of Semiconductors", Proc. SPIE 0742, Laser Applications to Chemical Dynamics, (1 January 1987); doi: 10.1117/12.966901; https://doi.org/10.1117/12.966901
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KEYWORDS
Phonons

Raman scattering

Raman spectroscopy

Sensors

Gallium arsenide

Semiconductors

Laser scattering

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