Mapping GaAs Photoluminescence

Raymond Kaminski

doi:10.1117/12.966929

1 January 1987 Mapping GaAs Photoluminescence

Raymond Kaminski

Proceedings Volume 0743, Fluorescence Detection; (1987) https://doi.org/10.1117/12.966929
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

Photoluminescence spectroscopy is one of the most effective methods for characterizing semiconductor materials like silicon, gallium arsenide or indium phosphide. This analytical technique supplies data that tells the researcher how well devices fabricated from a. particular material can be expected to perform. The information can then be used to optimize growing conditions or to reject a sample before additional processing. Such increases in, and stabilization of device yield are critical in a very competitive marketing environment.

Citation Download Citation

Raymond Kaminski "Mapping GaAs Photoluminescence", Proc. SPIE 0743, Fluorescence Detection, (1 January 1987); https://doi.org/10.1117/12.966929

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