11 August 1987 CMOS Detector Cells For Holographic Optical Interconnects In Microcircuits
Author Affiliations +
Proceedings Volume 0752, Digital Optical Computing; (1987) https://doi.org/10.1117/12.939927
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
This paper reports on the characterization of CMOS detectors for holographic optical interconnects in microcircuits. A VLSI temporal response system has been built, which has high-magnification viewing capabilities to facilitate identifying the sample area under investigation. A isolated photodiode and load circuit has been characterized to determine responsivity, response time and light spot positioning effects. The threshold of optical gate cells (OGC) incorporating the above detectors and a transistor inverter stage to couple to other circuitry has been determined. The rise time and fall time of the optical gate cells have also been determined experimentally. The results were compared with the results of SPICE simulation, and show satisfactory agreement. The time delay of optical gate cell output was thus determined to be 70 ns at 10 μW light input. Threshold power was 0.5 μW light input.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. H. Wu, W. H. Wu, A. R. Johnston, A. R. Johnston, } "CMOS Detector Cells For Holographic Optical Interconnects In Microcircuits", Proc. SPIE 0752, Digital Optical Computing, (11 August 1987); doi: 10.1117/12.939927; https://doi.org/10.1117/12.939927


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