11 August 1987 Micropower Laser Diodes For Optical Interconnects
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Proceedings Volume 0752, Digital Optical Computing; (1987) https://doi.org/10.1117/12.939932
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
Wideband optical interconnections aver short distances require significantly less optical power (i.e. < 10 microwatts) than do long-haul communication links for which most laser diodes are designed. The current trend in laser diode development emphasizes high power and single mode operation. For local point-to-point interconnections where laser power dissipation is a primary concern (e.g., systems having many channels and interconnection to super-conducting electronics), low threshold operation is paramount, while mode quality is less important. Our approach to laser design has been redirected by these requirements for low power operation. We present measurements of low-threshold laser diodes at cryogenic temperatures and discuss the suitability of such devices for low power operation with super-conducting electronics. We also discuss laser diode design approaches which emphasize micropower operation.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Phyllis Nelson, Phyllis Nelson, Robert E. Brooks, Robert E. Brooks, } "Micropower Laser Diodes For Optical Interconnects", Proc. SPIE 0752, Digital Optical Computing, (11 August 1987); doi: 10.1117/12.939932; https://doi.org/10.1117/12.939932
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